Optimization of Hydraulic Horsepower to Predict the Rate of Penetration
Issue:
Volume 6, Issue 3, May 2018
Pages:
63-75
Received:
22 February 2018
Accepted:
19 March 2018
Published:
10 May 2018
Abstract: The rate of penetration has an important role in the success of a drilling operation, this is because if the rate of penetration is not optimum will have an impact on the cost incurred. Some factors that influence the rate of penetration are the weight on bit, rotation per minute and horsepower. Based on the analysis obtained WOB and RPM values are optimum so that optimization is done on horsepower. In this case study the well that will be analyzed is vertical well so that bit’s hydraulic optimization is performed using Bit Hydraulic Horse Power (BHHP) method by adjusting the nozzle size and circulation rate, this method will be optimum if BHHP / HPs ratio is 65%. Evaluation on trajectory 12 ¼ well “SGT-01” field “Tranusa", obtained bit’s hydraulics on the actual conditions at 2657.48 ft - 2723.10 ft depth interval obtained Bit Hydraulic Horse Power (BHHP) of 232.67 hp, Horse Power Surface (HPs) 499.82 hp, Horse Power per Square Inches (HSI) of 1.67 hp / in² and percentage (BHHP / HPs) of 46.55% (<65%) indicating less optimum then optimized hydraulic bit circulation rate optimized to 710 gpm with Horsepower Hydraulic Horse Power (HPH) of 936.47 hp, Horse Power per Square Inches (HSI) of 5.4 hp / in² and percentage (BHHP / HPs) of 65% (already optimum). The final result of the evaluation and optimization of bit hydraulics and the removal of cutting is predicted to increase ROP from 46 fph to 125.66 fph.
Abstract: The rate of penetration has an important role in the success of a drilling operation, this is because if the rate of penetration is not optimum will have an impact on the cost incurred. Some factors that influence the rate of penetration are the weight on bit, rotation per minute and horsepower. Based on the analysis obtained WOB and RPM values are...
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Impurity State of Transition Group Elements in the Silicon Lattice in the Process of Their Interaction with Sulfur
Shaikrom Askarov,
Sharipov Bashirulla,
Srazhev Solizhon,
Toshboev Tuchi,
Salieva Shokhista
Issue:
Volume 6, Issue 3, May 2018
Pages:
76-79
Received:
7 February 2018
Accepted:
21 March 2018
Published:
14 June 2018
Abstract: On the basis of comparative analysis of electrical properties of silicon doped with sulfur and nickel respectively at temperature range of 1000-1250°C in 50°C increments and after their subsequent thermal annealing at temperature range of 400-950°C together with control samples of silicon doped with sulfur and nickel, it was revealed that impurity centers of sulfur and nickel do not interact with each other in the matrix of silicon. The absence of such interaction is possibly due to the fact that the electronic configuration of the impurity centers of nickel in the crystal lattice of silicon turns out to be in the filled 3d10 state, which gives it the character of an inert gas. In view of the absence of interaction of sulfur and nickel in silicon, it is concluded that electrically neutral chemically bound complexes in silicon are formed between sulfur substitution centers and centers of transition metal atoms.
Abstract: On the basis of comparative analysis of electrical properties of silicon doped with sulfur and nickel respectively at temperature range of 1000-1250°C in 50°C increments and after their subsequent thermal annealing at temperature range of 400-950°C together with control samples of silicon doped with sulfur and nickel, it was revealed that impurity ...
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