Spectral Fluctuations in A=32 Nuclei Using the Framework of the Nuclear Shell Model
Adel Khalaf Hamoudi,
Thuraya Amer AbdulHussein
Issue:
Volume 5, Issue 3, May 2017
Pages:
35-40
Received:
16 April 2017
Accepted:
2 May 2017
Published:
26 June 2017
Abstract: Chaotic properties of nuclear energy spectra in A=32 nuclei are investigated via the framework of the nuclear shell model. The energies (the main object of this investigation) are calculated through accomplishing shell model calculations employing the OXBASH computer code with the realistic effective interaction of W in the isospin formalism. The A=32 nuclei are supposed to have an inert 16O core with 16 nucleons move in the 1d5/2, 2s1/2 and 1d3/2 orbitals. For full hamiltonian calculations, the spectral fluctuations (i.e., the nearest neighbor level spacing distributions P(S) and the Δ3 statistics) are well characterized by the Gaussian orthogonal ensemble of random matrices. Besides, they show no dependency on the spin J and isospin T. For unperturbed hamiltonian calculations, we find a regular behavior for the distribution of P(S) and an intermediate behavior between the GOE and the Poisson limits for the Δ3 statistics.
Abstract: Chaotic properties of nuclear energy spectra in A=32 nuclei are investigated via the framework of the nuclear shell model. The energies (the main object of this investigation) are calculated through accomplishing shell model calculations employing the OXBASH computer code with the realistic effective interaction of W in the isospin formalism. The A...
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Highly (200)-Preferred Orientation TiN Thin Films Grown by DC Reactive Magnetron Sputtering
Li Haiyi,
Liu Yongzhi,
Gao Bingxiang,
Xie Liqiang
Issue:
Volume 5, Issue 3, May 2017
Pages:
41-45
Received:
27 June 2017
Published:
27 June 2017
Abstract: Titanium nitride (TiNx) thin films were prepared on Si(111) substrates by DC reactive magnetron sputtering. The influence of chamber pressure on the lattice constants, grain size, surface morphologies, conductivity and visible-near infrared reflectance of TiNx thin films were investigated. It is shown that the main component of the thin films is cubic TiN with (200) preferred orientation. The resistivity of the TiN thin film increase along with the increase of the chamber pressure, whereas the lattice constants and average reflectance within near infrared range of the TiN thin film decrease gradually. For all the TiN films, there is a minimum reflectance around 455nm.
Abstract: Titanium nitride (TiNx) thin films were prepared on Si(111) substrates by DC reactive magnetron sputtering. The influence of chamber pressure on the lattice constants, grain size, surface morphologies, conductivity and visible-near infrared reflectance of TiNx thin films were investigated. It is shown that the main component of the thin films is cu...
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